Effect of ICP N2O Oxidation on the Properties of Poly-Si Thin Film Transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ahn, Byung Tae | - |
| dc.date.accessioned | 2013-03-16T02:45:16Z | - |
| dc.date.available | 2013-03-16T02:45:16Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2001-08-01 | - |
| dc.identifier.citation | International Meeting on Information Display, v., no., pp.0 - 0 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/126617 | - |
| dc.language | ENG | - |
| dc.title | Effect of ICP N2O Oxidation on the Properties of Poly-Si Thin Film Transistors | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 0 | - |
| dc.citation.endingpage | 0 | - |
| dc.citation.publicationname | International Meeting on Information Display | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Ahn, Byung Tae | - |
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