DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, JH | ko |
dc.contributor.author | Kim, JH | ko |
dc.contributor.author | Noh, YS | ko |
dc.contributor.author | Park, Chul Soon | ko |
dc.date.accessioned | 2009-11-13T07:55:08Z | - |
dc.date.available | 2009-11-13T07:55:08Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004 | - |
dc.identifier.citation | AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, v.58, no.5, pp.358 - 361 | - |
dc.identifier.issn | 1434-8411 | - |
dc.identifier.uri | http://hdl.handle.net/10203/12584 | - |
dc.description.abstract | We report a 5 GHz linear InGaP/GaAs HBT monolithic microwave integrated circuit (MMIC) power amplifier for wireless LAN applications. The three-stage power amplifier operates with 103 mA - low quiescent current of Class AB mode using active bias circuit under a single supply of +3.3 V. A total current of 196 (194) mA is consumed with an output power of 18 dBm and PAE (power-added efficiency) of 9.7% at 5.25 (5.15) GHz. The power amplifier exhibits a power gain of 19.6 (17.8/18.5) dB, 1-dB compression point (P(1) dB) of 26 (25/25)dBm, and PAE of 27.8 (25.4/20)% at 5.25 (5.15/5.85)GHz. Measured third-order IMD (intermodulation distortion) is less than -25 dBc at 3 dB back-off and less than -30 dBc at 5 dB back-off from P(1) dB for the frequency range between 5.15 and 5.85 GHz. | - |
dc.description.sponsorship | by the Ministry of Science and Technology of Korea and KISTEP (Korea Institute of Science and Technology Evaluation and Planning). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELSEVIER GMBH | - |
dc.title | Low power consumption InGaP/GaAs HBT MMIC power amplifier for 5-6 GHz wireless LAN terminals | - |
dc.type | Article | - |
dc.identifier.wosid | 000224532800006 | - |
dc.identifier.scopusid | 2-s2.0-5444258282 | - |
dc.type.rims | ART | - |
dc.citation.volume | 58 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 358 | - |
dc.citation.endingpage | 361 | - |
dc.citation.publicationname | AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | - |
dc.identifier.doi | 10.1078/1434-8411-54100255 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Park, Chul Soon | - |
dc.contributor.nonIdAuthor | Kim, JH | - |
dc.contributor.nonIdAuthor | Kim, JH | - |
dc.contributor.nonIdAuthor | Noh, YS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | power amplifier | - |
dc.subject.keywordAuthor | heterojunction bipolar transistor (HBT) | - |
dc.subject.keywordAuthor | monolithic microwave integrated circuit (MMIC) | - |
dc.subject.keywordAuthor | low power consumption | - |
dc.subject.keywordAuthor | wireless local area network (WLAN) | - |
dc.subject.keywordAuthor | orthogonal frequency division multiplexing (OFDM) | - |
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