DC Field | Value | Language |
---|---|---|
dc.contributor.author | LEE, JW | ko |
dc.contributor.author | Ryoo, Ryong | ko |
dc.contributor.author | JHON, MS | ko |
dc.contributor.author | CHO, KI | ko |
dc.date.accessioned | 2009-11-13T05:25:23Z | - |
dc.date.available | 2009-11-13T05:25:23Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995-02 | - |
dc.identifier.citation | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, v.56, no.2, pp.293 - 299 | - |
dc.identifier.issn | 0022-3697 | - |
dc.identifier.uri | http://hdl.handle.net/10203/12569 | - |
dc.description.abstract | Hydrogenated silicon nitride films of 100-300 nm in thickness were prepared on GaAs and Si wafers by plasma enhanced chemical vapor deposition. The number of Si and N atoms in the film was measured by Rutherford backscattering. The number of H atoms was determined by an energy recoil detection (ERD) technique. A zero dose extrapolation method was employed to eliminate the effect of undesirable decrease in ERD count during ion-beam irradiation. The atomic density was determined by dividing the number of atoms by the film thickness obtained from ellipsometry. Infrared absorption cross sections of the Si-H and N-H bonds were obtained by using a correlation curve between IR band areas and the number of hydrogen atoms from ERD. The density of chemical bonds such as Si-Si, Si-N, Si-H and N-H was obtained by equating the atomic density with the absorption cross-section of the bonds. Investigation of the refractive index of films with different chemical structures suggests that a concept of the bond refraction can explain a relatively high refractive index (1.8-2.3) and low density (2.1-2.7 g/cm-3) of the Si-rich silicon nitride films, as compared with a stoichiometric compound Si3N4. The etch rate of the silicon nitride film in buffered oxide etchant solution showed a linear relation against the density of silicon atoms that were not bonded to hydrogen. | - |
dc.description.sponsorship | This work was partly supported by Ministry of Science and Technology, Korea. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | BOND DENSITY AND PHYSICOCHEMICAL PROPERTIES OF A HYDROGENATED SILICON-NITRIDE FILM | - |
dc.type | Article | - |
dc.identifier.wosid | A1995QM88100021 | - |
dc.identifier.scopusid | 2-s2.0-0029255990 | - |
dc.type.rims | ART | - |
dc.citation.volume | 56 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 293 | - |
dc.citation.endingpage | 299 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | - |
dc.identifier.doi | 10.1016/0022-3697(95)80016-6 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Ryoo, Ryong | - |
dc.contributor.nonIdAuthor | LEE, JW | - |
dc.contributor.nonIdAuthor | JHON, MS | - |
dc.contributor.nonIdAuthor | CHO, KI | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | PLASMA DEPOSITION | - |
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