DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chung, HJ | - |
dc.contributor.author | Kim, JH | - |
dc.contributor.author | Moon, WS | - |
dc.contributor.author | Park, SeungBin | - |
dc.contributor.author | Hwang, CS | - |
dc.contributor.author | Lee, MY | - |
dc.contributor.author | Woo, Seong-Ihl | - |
dc.date.accessioned | 2013-03-15T22:55:25Z | - |
dc.date.available | 2013-03-15T22:55:25Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996 | - |
dc.identifier.citation | 3rd Pacific Rim conference on the Applications of Ferroelectric Materials, v., no., pp.59 - 62 | - |
dc.identifier.uri | http://hdl.handle.net/10203/124814 | - |
dc.description.abstract | A novel type of down-flow LSMCVD (Liquid Source Mist CVD) reactor was developed to prepare a high dielectric BST thin film on Pt electrode on Si wafer. Barium acetate [Ba (OOCCH3)2], strontium acetate [Sr (OOCCH3)2], and titanium isoproxide [Ti (OC3H7 i )4] were used as metal sources. Metal sources were dissolved in acetic acid, 1-butanol, or 2-methoxyethanol. BST [Ba/(Ba + Sr) = 0.7] film annealed on Pt/Ti/SiO2/Si above 650°C was polycrystalline. BST film has a (110) preferred orientation with increasing temperature. Surface roughness of BST film and grain size increased with increasing temperature. The metal-oxygen bond was formed at 650°C as shown in the spectra of FTIR. The depth profiles of elements of BST thin films indicated a uniform composition throughout the film. BST films annealed at 750°C showed a dielectric constant and a tanδ of 390 (thickness: 150 nm) and 0.06 at a frequency of 100 kHz, respectively. The behavior of capacitance of the BST film with bias voltage showed paraelectric property. BST film annealed at 750°C had the leakage current density of 3.2 (μA/cm2) at a bias voltage of 2V. | - |
dc.language | ENG | - |
dc.title | Preparation of BST thin films on Pt electrode on Si wafer with down-flow LSMCVD reactor | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 59 | - |
dc.citation.endingpage | 62 | - |
dc.citation.publicationname | 3rd Pacific Rim conference on the Applications of Ferroelectric Materials | - |
dc.identifier.conferencecountry | Japan | - |
dc.identifier.conferencecountry | Japan | - |
dc.contributor.localauthor | Park, SeungBin | - |
dc.contributor.localauthor | Woo, Seong-Ihl | - |
dc.contributor.nonIdAuthor | Chung, HJ | - |
dc.contributor.nonIdAuthor | Kim, JH | - |
dc.contributor.nonIdAuthor | Moon, WS | - |
dc.contributor.nonIdAuthor | Hwang, CS | - |
dc.contributor.nonIdAuthor | Lee, MY | - |
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