Body thickness dependence of impact ionization in a multiple-gate FinFET

Cited 21 time in webofscience Cited 0 time in scopus
  • Hit : 202
  • Download : 513
DC FieldValueLanguage
dc.contributor.authorHan, Jin-Wooko
dc.contributor.authorLee, Jiyeko
dc.contributor.authorPark, Donggunko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2009-11-11T04:52:03Z-
dc.date.available2009-11-11T04:52:03Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-07-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.28, no.7, pp.625 - 627-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/12407-
dc.description.abstractThe body thickness dependence of impact ionization for a multiple-gate fin field-effect transistor (FinFET) is presented. It is found that the nonlocal effect and series resistance are distinct features of reduced impact ionization in the multiple-gate FinFET, and these effects become more pronounced as the body thickness decreases. The impact ionization constant B-i is newly extracted by considering the series resistance and nonlocal carrier heating effect. A refined analytical substrate current model is developed from the previous model and revamped for multiple-gate devices. The new substrate current model is then compared with measurement data, and good agreement is observed.-
dc.description.sponsorshipThis work was supported in part by Samsung Electronics Co., Ltd., and in part by the National Research Program for the 0.1-Terabit Nonvolatile Memory Development sponsored by the Ministry of Commerce, Industry and Energy of the Korean Government.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectDEVICES-
dc.titleBody thickness dependence of impact ionization in a multiple-gate FinFET-
dc.typeArticle-
dc.identifier.wosid000247643900028-
dc.identifier.scopusid2-s2.0-34447269711-
dc.type.rimsART-
dc.citation.volume28-
dc.citation.issue7-
dc.citation.beginningpage625-
dc.citation.endingpage627-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2007.898284-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorHan, Jin-Woo-
dc.contributor.nonIdAuthorLee, Jiye-
dc.contributor.nonIdAuthorPark, Donggun-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcharacteristic length-
dc.subject.keywordAuthorfin field-effect transistor (FinFET)-
dc.subject.keywordAuthorimpact ionization-
dc.subject.keywordAuthormultiple-gate MOSFET-
dc.subject.keywordAuthornonlocal effect-
dc.subject.keywordAuthorsubstrate current-
dc.subject.keywordAuthortrigate-
dc.subject.keywordPlusDEVICES-
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 21 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0