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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Performance breakthrough in NOR flash memory with dopant-segregated Schottky-barrier (DSSB) SONOS devices

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dc.contributor.authorChoi, S.-J.ko
dc.contributor.authorHan, J.-W.ko
dc.contributor.authorKim, S.ko
dc.contributor.authorMoon, D.-I.ko
dc.contributor.authorJang, M.-G.ko
dc.contributor.authorJin, S.K.ko
dc.contributor.authorKwang, H.K.ko
dc.contributor.authorGi, S.L.ko
dc.contributor.authorJae, S.O.ko
dc.contributor.authorMyong, H.S.ko
dc.contributor.authorYun, C.P.ko
dc.contributor.authorJeoung, W.K.ko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2009-11-11T02:51:04Z-
dc.date.available2009-11-11T02:51:04Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-06-16-
dc.identifier.citation2009 Symposium on VLSI Technology, VLSIT 2009, pp.222 - 223-
dc.identifier.urihttp://hdl.handle.net/10203/12401-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titlePerformance breakthrough in NOR flash memory with dopant-segregated Schottky-barrier (DSSB) SONOS devices-
dc.typeConference-
dc.identifier.wosid000275651200087-
dc.identifier.scopusid2-s2.0-71049134026-
dc.type.rimsCONF-
dc.citation.beginningpage222-
dc.citation.endingpage223-
dc.citation.publicationname2009 Symposium on VLSI Technology, VLSIT 2009-
dc.identifier.conferencecountryJA-
dc.identifier.conferencelocationKyoto-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorChoi, S.-J.-
dc.contributor.nonIdAuthorHan, J.-W.-
dc.contributor.nonIdAuthorKim, S.-
dc.contributor.nonIdAuthorMoon, D.-I.-
dc.contributor.nonIdAuthorJang, M.-G.-
dc.contributor.nonIdAuthorJin, S.K.-
dc.contributor.nonIdAuthorKwang, H.K.-
dc.contributor.nonIdAuthorGi, S.L.-
dc.contributor.nonIdAuthorJae, S.O.-
dc.contributor.nonIdAuthorMyong, H.S.-
dc.contributor.nonIdAuthorYun, C.P.-
dc.contributor.nonIdAuthorJeoung, W.K.-
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