Integrity of Gate Oxide on TFSOI Materials
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hyung-Cheol Shin | - |
| dc.date.accessioned | 2013-03-15T20:27:56Z | - |
| dc.date.available | 2013-03-15T20:27:56Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995 | - |
| dc.identifier.citation | Proc. IEEE International SOI Conference, v., no., pp.22 - 23 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/123558 | - |
| dc.language | ENG | - |
| dc.title | Integrity of Gate Oxide on TFSOI Materials | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 22 | - |
| dc.citation.endingpage | 23 | - |
| dc.citation.publicationname | Proc. IEEE International SOI Conference | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Hyung-Cheol Shin | - |
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