DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, JH | ko |
dc.contributor.author | Kim, JH | ko |
dc.contributor.author | Noh, YS | ko |
dc.contributor.author | Park, Chul Soon | ko |
dc.date.accessioned | 2009-11-10T06:15:42Z | - |
dc.date.available | 2009-11-10T06:15:42Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-06 | - |
dc.identifier.citation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.38, no.6, pp.905 - 910 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.uri | http://hdl.handle.net/10203/12352 | - |
dc.description.abstract | We demonstrate a new linearized monolithic microwave integrated circuit smart power amplifier of extraordinary high power-added efficiency (PAE), especially at the most probable transmission power of wide-band code-division multiple-access handsets. A PAE of 21% at 16 dBm of output power, which is the maximum bound of the most probable transmission power in IS-95 systems, was obtained, as well as 40% at 28 dBm, the required maximum output power, with a single-chip MMIC power amplifier. The power amplifier has been devised with two InGaP-GaAs heterojunction bipolar transistor amplifying chains parallel connected, each chain being optimized for a different P(1 dB) (1-dB compression point) value: one for 16 dBm for the low-power mode, targeting the most probable transmission power, and the other for 28 dBm for the high-power mode. The high-power mode operation shows 40% of PAE and -30 dBc of adjacent channel leakage power ratio (ACLR) at the maximum output power of 28 dBm. The low-power mode operation exhibits -34 dBc of ACLR at 16 dBm with 14 mA of a quiescent current. This amplifier improves power usage efficiency and, consequently, the battery lifetime of the handset by a factor of three. | - |
dc.description.sponsorship | by the Ministry of Science and Technology of Korea and by the Korea Institute of Science and Technology Evaluation and Planning(KISTEP). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | An InGaP-GaAsHBT MMIC smart power amplifier for W-CDMA mobile handsets | - |
dc.type | Article | - |
dc.identifier.wosid | 000183267800007 | - |
dc.identifier.scopusid | 2-s2.0-0038718731 | - |
dc.type.rims | ART | - |
dc.citation.volume | 38 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 905 | - |
dc.citation.endingpage | 910 | - |
dc.citation.publicationname | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Park, Chul Soon | - |
dc.contributor.nonIdAuthor | Kim, JH | - |
dc.contributor.nonIdAuthor | Kim, JH | - |
dc.contributor.nonIdAuthor | Noh, YS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | heterojunction bipolar transistor (HBT) | - |
dc.subject.keywordAuthor | linearization techniques | - |
dc.subject.keywordAuthor | monolithic microwave integrated circuit (MMIC) | - |
dc.subject.keywordAuthor | parallel architecture | - |
dc.subject.keywordAuthor | power amplifiers | - |
dc.subject.keywordAuthor | wide-band code-division multiple access (W-CDMA) | - |
dc.subject.keywordPlus | EFFICIENCY | - |
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