The structure of the Si-SiO2 interface formed by oxygen ion beam bombardment and high temperature annealing
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최시경 | - |
| dc.contributor.author | 김영필 | - |
| dc.contributor.author | 김현경 | - |
| dc.contributor.author | 문동원 | - |
| dc.date.accessioned | 2013-03-15T20:20:52Z | - |
| dc.date.available | 2013-03-15T20:20:52Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1997 | - |
| dc.identifier.citation | 한국진공학회, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/123505 | - |
| dc.language | KOR | - |
| dc.title | The structure of the Si-SiO2 interface formed by oxygen ion beam bombardment and high temperature annealing | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 한국진공학회 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 최시경 | - |
| dc.contributor.nonIdAuthor | 김영필 | - |
| dc.contributor.nonIdAuthor | 김현경 | - |
| dc.contributor.nonIdAuthor | 문동원 | - |
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