Electrical Properties of CIS Films Prepared by Evaporation of Cu2Se and In2Se3
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ahn, Byung Tae | - |
| dc.date.accessioned | 2013-03-15T20:03:36Z | - |
| dc.date.available | 2013-03-15T20:03:36Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1996 | - |
| dc.identifier.citation | 9th Photovoltaic Science and Engineering Conference (PVSEC-9), v., no., pp.395 - 396 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/123362 | - |
| dc.language | ENG | - |
| dc.title | Electrical Properties of CIS Films Prepared by Evaporation of Cu2Se and In2Se3 | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 395 | - |
| dc.citation.endingpage | 396 | - |
| dc.citation.publicationname | 9th Photovoltaic Science and Engineering Conference (PVSEC-9) | - |
| dc.contributor.localauthor | Ahn, Byung Tae | - |
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