An intelligent power amplifier MMIC using a new adaptive bias control circuit for W-CDMA applications

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dc.contributor.authorNoh, YSko
dc.contributor.authorPark, Chul Soonko
dc.date.accessioned2009-11-09T07:51:55Z-
dc.date.available2009-11-09T07:51:55Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-06-
dc.identifier.citationIEEE JOURNAL OF SOLID-STATE CIRCUITS, v.39, pp.967 - 970-
dc.identifier.issn0018-9200-
dc.identifier.urihttp://hdl.handle.net/10203/12279-
dc.description.abstractA high-linearity and high-efficiency MMIC power amplifier is proposed that adopts a new on-chip adaptive bias control circuit, which simultaneously improves efficiency at the low output power level and linearity at the high output power level. The adaptive bias control circuit detects the input power level and supplies a low quiescent current of 16 mA at the low output power level and an increased current up to 90 mA according to the increased power level adaptively. The intelligent W-CDMA power amplifier using the adaptive bias circuit exhibits an improvement of average power usage efficiency of more than 1.93 times, and an adjacent channel leakage ratio by 4 dB at the output power of 28.3 dBm.-
dc.description.sponsorshipby the Ministry of Science and Technology of Korea and KISTEP.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleAn intelligent power amplifier MMIC using a new adaptive bias control circuit for W-CDMA applications-
dc.typeArticle-
dc.identifier.wosid000221803600013-
dc.identifier.scopusid2-s2.0-2942668126-
dc.type.rimsART-
dc.citation.volume39-
dc.citation.beginningpage967-
dc.citation.endingpage970-
dc.citation.publicationnameIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.identifier.doi10.1109/JSSC.2004.827804-
dc.contributor.localauthorPark, Chul Soon-
dc.contributor.nonIdAuthorNoh, YS-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoradaptive bias control-
dc.subject.keywordAuthorheterojunction bipolar transistor (HBT)-
dc.subject.keywordAuthorhigh efficiency-
dc.subject.keywordAuthorhigh linearity-
dc.subject.keywordAuthorMMIC-
dc.subject.keywordAuthorpower amplifier-
dc.subject.keywordAuthorwide-band code-division multiple access (W-CDMA)-
dc.subject.keywordPlusEFFICIENCY-
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