Observation of the Si lattice strain in the Si(001)-SiO2 interface transition layer using medium energy ion scattering

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dc.contributor.author최시경-
dc.contributor.author김영필-
dc.contributor.author김현경-
dc.contributor.author문대원-
dc.date.accessioned2013-03-15T18:16:48Z-
dc.date.available2013-03-15T18:16:48Z-
dc.date.created2012-02-06-
dc.date.issued1997-
dc.identifier.citation추계 한국요업학회, v., no., pp.129 --
dc.identifier.urihttp://hdl.handle.net/10203/122283-
dc.languageKOR-
dc.titleObservation of the Si lattice strain in the Si(001)-SiO2 interface transition layer using medium energy ion scattering-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage129-
dc.citation.publicationname추계 한국요업학회-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor최시경-
dc.contributor.nonIdAuthor김영필-
dc.contributor.nonIdAuthor김현경-
dc.contributor.nonIdAuthor문대원-
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MS-Conference Papers(학술회의논문)
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