High quality thin gate Dielectric using ECR N2O-plasma for poly-Si TFT applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chul-Hi Han | - |
| dc.date.accessioned | 2013-03-15T16:58:17Z | - |
| dc.date.available | 2013-03-15T16:58:17Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1996 | - |
| dc.identifier.citation | 190th Eletrochemical Society Meeting, v., no., pp.668 - 668 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/121570 | - |
| dc.language | ENG | - |
| dc.title | High quality thin gate Dielectric using ECR N2O-plasma for poly-Si TFT applications | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 668 | - |
| dc.citation.endingpage | 668 | - |
| dc.citation.publicationname | 190th Eletrochemical Society Meeting | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Chul-Hi Han | - |
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