DSpace at KOASAS
College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Electrical characteristics of n- and p-MOSFETs with N2O-reoxidized NH3-nitrided N2O oxides as gate dielectrics

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 314
  • Download : 0
Export
Yoon, Giwanresearcher
Publisher
SPIE Microelectronic Device and Multilevel Interconnection Technology
Issue Date
1995-04
Language
ENG
Citation

SPIE Microelectronic Device and Multilevel Interconnection Technology, pp.208 - 217

URI
http://hdl.handle.net/10203/121539
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

Display Full Item Record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


rss_1.0 rss_2.0 atom_1.0