Characterization of high quality nitrided gate dielectric films manufactured in reduced pressure furnace for ULSI CMOS applications
- Issue Date
- 1997-04
- Language
- ENG
- Citation
Electrochemical Society Meeting Proceeding (Montreal, Canada), 1997 Spring, pp.418 - 429
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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