Si/Si0.8Ge0.2/Si 양자우물구조에서의 정공특성 분석Analysis hole property in Si/Si0.8Ge0.2/Si Quantum Well
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 홍성철 | - |
| dc.contributor.author | 전상훈 | - |
| dc.contributor.author | 이승창 | - |
| dc.contributor.author | 유경화 | - |
| dc.date.accessioned | 2013-03-15T16:47:23Z | - |
| dc.date.available | 2013-03-15T16:47:23Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995 | - |
| dc.identifier.citation | 제 2회 한국반도체 학술대회, Si/SiGe, v., no., pp.271 - 272 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/121480 | - |
| dc.language | KOR | - |
| dc.title | Si/Si0.8Ge0.2/Si 양자우물구조에서의 정공특성 분석Analysis hole property in Si/Si0.8Ge0.2/Si Quantum Well | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 271 | - |
| dc.citation.endingpage | 272 | - |
| dc.citation.publicationname | 제 2회 한국반도체 학술대회, Si/SiGe | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 홍성철 | - |
| dc.contributor.nonIdAuthor | 전상훈 | - |
| dc.contributor.nonIdAuthor | 이승창 | - |
| dc.contributor.nonIdAuthor | 유경화 | - |
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