Suppressed Short-Channel Effects and Improved Stability in Polysilicon Thin Film Transistors with Very Thin ECR N2O-Pkasma Gate Oxide
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chul-Hi Han | - |
| dc.date.accessioned | 2013-03-15T15:31:32Z | - |
| dc.date.available | 2013-03-15T15:31:32Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1997 | - |
| dc.identifier.citation | Technical Digest of International Electron Devices Meeting, Washington D.C, v., no., pp.519 - 521 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/120790 | - |
| dc.language | ENG | - |
| dc.title | Suppressed Short-Channel Effects and Improved Stability in Polysilicon Thin Film Transistors with Very Thin ECR N2O-Pkasma Gate Oxide | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 519 | - |
| dc.citation.endingpage | 521 | - |
| dc.citation.publicationname | Technical Digest of International Electron Devices Meeting, Washington D.C | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Chul-Hi Han | - |
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