Suppressed Short-Channel Effects and Improved Stability in Polysilicon Thin Film Transistors with Very Thin ECR N2O-Pkasma Gate Oxide

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Issue Date
1997
Language
ENG
Citation

Technical Digest of International Electron Devices Meeting, Washington D.C, pp.519 - 521

URI
http://hdl.handle.net/10203/120790
Appears in Collection
RIMS Conference Papers
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