Suppressed Short-Channel Effects and Improved Stability in Polysilicon Thin Film Transistors with Very Thin ECR N2O-Pkasma Gate Oxide
- Issue Date
- 1997
- Language
- ENG
- Citation
Technical Digest of International Electron Devices Meeting, Washington D.C, pp.519 - 521
- Appears in Collection
- RIMS Conference Papers
- Files in This Item
- There are no files associated with this item.
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