Silicon nano-crystal memory with tunneling nitride

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dc.contributor.authorHyung-Cheol Shin-
dc.date.accessioned2013-03-15T14:09:34Z-
dc.date.available2013-03-15T14:09:34Z-
dc.date.created2012-02-06-
dc.date.issued1998-
dc.identifier.citationInternational Conference on Solid State Devices and Materials, v., no., pp.170 - 171-
dc.identifier.urihttp://hdl.handle.net/10203/120109-
dc.languageENG-
dc.titleSilicon nano-crystal memory with tunneling nitride-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage170-
dc.citation.endingpage171-
dc.citation.publicationnameInternational Conference on Solid State Devices and Materials-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorHyung-Cheol Shin-
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