Discrimination of substrate-induced artifact from photoluminescence peak of heavily doped GaAs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이희철 | - |
| dc.contributor.author | 김재은 | - |
| dc.contributor.author | 박해용 | - |
| dc.contributor.author | Nam-Young Lee | - |
| dc.contributor.author | Jae-Eun Kim | - |
| dc.contributor.author | Dong-Hwa Kwak | - |
| dc.date.accessioned | 2013-03-15T13:51:14Z | - |
| dc.date.available | 2013-03-15T13:51:14Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1996 | - |
| dc.identifier.citation | 제 3회 한국반도체 학술대회, v., no., pp.79 - 80 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/119986 | - |
| dc.language | KOR | - |
| dc.title | Discrimination of substrate-induced artifact from photoluminescence peak of heavily doped GaAs | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 79 | - |
| dc.citation.endingpage | 80 | - |
| dc.citation.publicationname | 제 3회 한국반도체 학술대회 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 이희철 | - |
| dc.contributor.localauthor | 김재은 | - |
| dc.contributor.localauthor | 박해용 | - |
| dc.contributor.nonIdAuthor | Nam-Young Lee | - |
| dc.contributor.nonIdAuthor | Jae-Eun Kim | - |
| dc.contributor.nonIdAuthor | Dong-Hwa Kwak | - |
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