Dielectric and Ferroelectric Properties of PLT thin Films Deposited by LP-MOCVD

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 359
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorKim, Ho Gi-
dc.date.accessioned2013-03-15T13:44:48Z-
dc.date.available2013-03-15T13:44:48Z-
dc.date.created2012-02-06-
dc.date.issued1995-01-01-
dc.identifier.citationPRICM '95, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/119950-
dc.languageENG-
dc.titleDielectric and Ferroelectric Properties of PLT thin Films Deposited by LP-MOCVD-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnamePRICM '95-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorKim, Ho Gi-
Appears in Collection
MS-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0