Dielectric and Ferroelectric Properties of PLT thin Films Deposited by LP-MOCVD

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dc.contributor.authorKim, Ho Gi-
dc.date.accessioned2013-03-15T13:44:48Z-
dc.date.available2013-03-15T13:44:48Z-
dc.date.created2012-02-06-
dc.date.issued1995-01-01-
dc.identifier.citationPRICM '95, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/119950-
dc.languageENG-
dc.titleDielectric and Ferroelectric Properties of PLT thin Films Deposited by LP-MOCVD-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnamePRICM '95-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorKim, Ho Gi-
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MS-Conference Papers(학술회의논문)
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