DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Ko, LH | - |
dc.contributor.author | Nga, YA | - |
dc.contributor.author | Chan, LH | - |
dc.date.accessioned | 2013-03-15T12:31:18Z | - |
dc.date.available | 2013-03-15T12:31:18Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-08-29 | - |
dc.identifier.citation | Proc. of 1998 IEEE Hong Kong Electron Devices Meeting, v., no., pp.32 - 32 | - |
dc.identifier.uri | http://hdl.handle.net/10203/119482 | - |
dc.language | ENG | - |
dc.title | The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in process | - |
dc.title.alternative | The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in process | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 32 | - |
dc.citation.endingpage | 32 | - |
dc.citation.publicationname | Proc. of 1998 IEEE Hong Kong Electron Devices Meeting | - |
dc.identifier.conferencecountry | Hong Kong | - |
dc.identifier.conferencecountry | Hong Kong | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Ko, LH | - |
dc.contributor.nonIdAuthor | Nga, YA | - |
dc.contributor.nonIdAuthor | Chan, LH | - |
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