The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in processThe effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in process

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Issue Date
1998-08-29
Language
ENG
Citation

Proc. of 1998 IEEE Hong Kong Electron Devices Meeting, pp.32 - 32

URI
http://hdl.handle.net/10203/119482
Appears in Collection
EE-Conference Papers(학술회의논문)
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