Physical-based analytical turn-on model of polysilicon thin film transistors for circuit simulation
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang Gi-Young | - |
| dc.contributor.author | Hur Sung-Hoi | - |
| dc.contributor.author | Kim Choong-Ki | - |
| dc.contributor.author | Han Chul-Hi | - |
| dc.date.accessioned | 2013-03-15T11:32:02Z | - |
| dc.date.available | 2013-03-15T11:32:02Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995-12-10 | - |
| dc.identifier.citation | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95, v., no., pp.953 - 956 | - |
| dc.identifier.issn | 0163-1918 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/119123 | - |
| dc.language | ENG | - |
| dc.title | Physical-based analytical turn-on model of polysilicon thin film transistors for circuit simulation | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-0029517869 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 953 | - |
| dc.citation.endingpage | 956 | - |
| dc.citation.publicationname | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Han Chul-Hi | - |
| dc.contributor.nonIdAuthor | Yang Gi-Young | - |
| dc.contributor.nonIdAuthor | Hur Sung-Hoi | - |
| dc.contributor.nonIdAuthor | Kim Choong-Ki | - |
- Appears in Collection
- RIMS Conference Papers
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.