DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho Seong-Soon | - |
dc.contributor.author | Kim, Ho Gi | - |
dc.date.accessioned | 2013-03-15T10:54:09Z | - |
dc.date.available | 2013-03-15T10:54:09Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-08-18 | - |
dc.identifier.citation | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), v.2, no., pp.983 - 986 | - |
dc.identifier.uri | http://hdl.handle.net/10203/118809 | - |
dc.language | ENG | - |
dc.title | Pt deposition effect for the catalyst of the semiconducting oxygen sensor | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-0030370998 | - |
dc.type.rims | CONF | - |
dc.citation.volume | 2 | - |
dc.citation.beginningpage | 983 | - |
dc.citation.endingpage | 986 | - |
dc.citation.publicationname | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.contributor.nonIdAuthor | Cho Seong-Soon | - |
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