Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics
- Publisher
- IEEE
- Issue Date
- 1998-12-06
- Language
- English
- Citation
Proceedings of the 1998 IEEE International Electron Devices Meeting, pp.111 - 114
- ISSN
- 0163-1918
- Appears in Collection
- RIMS Conference Papers
- Files in This Item
- There are no files associated with this item.
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