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Iridium Thin Film as a Bottom Electrode for High Dielectric (Ba,Sr)TiO3 Capacitors

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dc.contributor.authorLee, Hee Chul-
dc.contributor.authorCha, SY-
dc.contributor.authorJang, BT-
dc.contributor.authorKwak, KH-
dc.contributor.authorShin, CH-
dc.date.accessioned2013-03-15T09:39:26Z-
dc.date.available2013-03-15T09:39:26Z-
dc.date.created2012-02-06-
dc.date.issued1997-
dc.identifier.citation9th International Symposium on Integrated Ferroelectrics, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/118335-
dc.languageENG-
dc.titleIridium Thin Film as a Bottom Electrode for High Dielectric (Ba,Sr)TiO3 Capacitors-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname9th International Symposium on Integrated Ferroelectrics-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorCha, SY-
dc.contributor.nonIdAuthorJang, BT-
dc.contributor.nonIdAuthorKwak, KH-
dc.contributor.nonIdAuthorShin, CH-
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EE-Conference Papers(학술회의논문)
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