InP Double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE
- Publisher
- IEEE
- Issue Date
- 1997-08-04
- Language
- ENG
- Citation
IEEE Cornell Conf, pp.278 - 286
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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