Increase in $In_{0.32}Ga_{0.68}$P Bandgap Energy due to the Electron Capturing of the DX Centers
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박해용 | - |
| dc.contributor.author | 김재은 | - |
| dc.date.accessioned | 2013-03-15T08:54:28Z | - |
| dc.date.available | 2013-03-15T08:54:28Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995 | - |
| dc.identifier.citation | Korean Conference on Semiconductor, v., no., pp.245 - 246 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/118024 | - |
| dc.language | KOR | - |
| dc.title | Increase in $In_{0.32}Ga_{0.68}$P Bandgap Energy due to the Electron Capturing of the DX Centers | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 245 | - |
| dc.citation.endingpage | 246 | - |
| dc.citation.publicationname | Korean Conference on Semiconductor | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 박해용 | - |
| dc.contributor.localauthor | 김재은 | - |
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