DSpace at KOASAS: Increase in $In_{0.32}Ga_{0.68}$P Bandgap Energy due to the Electron Capturing of the DX Centers

DSpace at KOASAS

College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Conference Papers(학술회의논문)

Increase in $In_{0.32}Ga_{0.68}$P Bandgap Energy due to the Electron Capturing of the DX Centers

Cited 0 time in webofscience

Cited 0 time in scopus

Hit : 401
Download : 0

Export

박해용 researcher / 김재은 researcher

Issue Date: 1995

Language: KOR

Citation: Korean Conference on Semiconductor, pp.245 - 246

URI: http://hdl.handle.net/10203/118024

Appears in Collection: PH-Conference Papers(학술회의논문)

Files in This Item: There are no files associated with this item.

Display Full Item Record

qr_code

트윗하기

KOASAS

Knowledge Service Development Team, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea. T. 82-42-350-4493 Email. koasas@kaist.ac.kr
Copyright © 2016. Korea Advanced Institute of Science and Technology. All Rights Reserved.

KOASAS

KOASAS

Browse

Increase in $In_{0.32}Ga_{0.68}$P Bandgap Energy due to the Electron Capturing of the DX Centers

KOASAS

Communities & Collections