Increase in $In_{0.32}Ga_{0.68}$P Bandgap Energy due to the Electron Capturing of the DX Centers

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Issue Date
1995
Language
KOR
Citation

Korean Conference on Semiconductor, pp.245 - 246

URI
http://hdl.handle.net/10203/118024
Appears in Collection
PH-Conference Papers(학술회의논문)
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