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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Conference Papers(학술회의논문)

Photoluminescence Spetra of Heavily Si-Doped GaAs at Low Temperature

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dc.contributor.author이희철-
dc.contributor.author박해용-
dc.contributor.author김재은-
dc.contributor.authorLee, NY-
dc.contributor.authorKwak, DH-
dc.contributor.authorLim, H-
dc.date.accessioned2013-03-15T08:27:43Z-
dc.date.available2013-03-15T08:27:43Z-
dc.date.created2012-02-06-
dc.date.issued1995-08-01-
dc.identifier.citationInternational Symposium on Compound Semiconductor, v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/117862-
dc.languageKOR-
dc.titlePhotoluminescence Spetra of Heavily Si-Doped GaAs at Low Temperature-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationnameInternational Symposium on Compound Semiconductor-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor이희철-
dc.contributor.localauthor박해용-
dc.contributor.localauthor김재은-
dc.contributor.nonIdAuthorLee, NY-
dc.contributor.nonIdAuthorKwak, DH-
dc.contributor.nonIdAuthorLim, H-
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