The Post-Annealing Effect on the Electrical Properties of SrBi2Ta2O9 Thin film by Sol-gel Method
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Hee Chul | - |
| dc.contributor.author | Shin, CH | - |
| dc.contributor.author | Jang, BT | - |
| dc.contributor.author | Cha, SY | - |
| dc.contributor.author | Kwak, DH | - |
| dc.date.accessioned | 2013-03-15T08:14:38Z | - |
| dc.date.available | 2013-03-15T08:14:38Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1997-08-01 | - |
| dc.identifier.citation | The 9th International Meeting on Ferroelectricity, v., no., pp.0 - 0 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/117729 | - |
| dc.language | ENG | - |
| dc.title | The Post-Annealing Effect on the Electrical Properties of SrBi2Ta2O9 Thin film by Sol-gel Method | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 0 | - |
| dc.citation.endingpage | 0 | - |
| dc.citation.publicationname | The 9th International Meeting on Ferroelectricity | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Lee, Hee Chul | - |
| dc.contributor.nonIdAuthor | Shin, CH | - |
| dc.contributor.nonIdAuthor | Jang, BT | - |
| dc.contributor.nonIdAuthor | Cha, SY | - |
| dc.contributor.nonIdAuthor | Kwak, DH | - |
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