The Post-Annealing Effect on the Electrical Properties of SrBi2Ta2O9 Thin film by Sol-gel Method

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dc.contributor.authorLee, Hee Chul-
dc.contributor.authorShin, CH-
dc.contributor.authorJang, BT-
dc.contributor.authorCha, SY-
dc.contributor.authorKwak, DH-
dc.date.accessioned2013-03-15T08:14:38Z-
dc.date.available2013-03-15T08:14:38Z-
dc.date.created2012-02-06-
dc.date.issued1997-08-01-
dc.identifier.citationThe 9th International Meeting on Ferroelectricity, v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/117729-
dc.languageENG-
dc.titleThe Post-Annealing Effect on the Electrical Properties of SrBi2Ta2O9 Thin film by Sol-gel Method-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationnameThe 9th International Meeting on Ferroelectricity-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorShin, CH-
dc.contributor.nonIdAuthorJang, BT-
dc.contributor.nonIdAuthorCha, SY-
dc.contributor.nonIdAuthorKwak, DH-
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EE-Conference Papers(학술회의논문)
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