SPICE-Based DC and Microwave Characterization of InAlAs/InGaAs HBT’s Used for Large-Bandwidth Integrated Transimpedance Amplifiers

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dc.contributor.authorYang, Kyounghoon-
dc.contributor.authorGutierrez-Aitken, A. L.-
dc.contributor.authorZhang, X.-
dc.contributor.authorHaddad, G. I.-
dc.contributor.authorBhattacharya, P.-
dc.date.accessioned2007-08-30T06:50:13Z-
dc.date.available2007-08-30T06:50:13Z-
dc.date.created2012-02-06-
dc.date.issued1995-05-
dc.identifier.citationIEEE Int. Conf. on InP and Related materials, v., no., pp.448 - 451-
dc.identifier.urihttp://hdl.handle.net/10203/1173-
dc.description.sponsorshipthe Advanced Research Projects Agency and the U. S. Army Research Office under the URI programen
dc.languageENG-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titleSPICE-Based DC and Microwave Characterization of InAlAs/InGaAs HBT’s Used for Large-Bandwidth Integrated Transimpedance Amplifiers-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage448-
dc.citation.endingpage451-
dc.citation.publicationnameIEEE Int. Conf. on InP and Related materials-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorGutierrez-Aitken, A. L.-
dc.contributor.nonIdAuthorZhang, X.-
dc.contributor.nonIdAuthorHaddad, G. I.-
dc.contributor.nonIdAuthorBhattacharya, P.-

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