DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Han, Jin-Woo | ko |
dc.contributor.author | Jang, Moon-Gyu | ko |
dc.contributor.author | Choi, Chel-Jong | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2009-10-08T05:17:40Z | - |
dc.date.available | 2009-10-08T05:17:40Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-08 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.95, no.8 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/11720 | - |
dc.description.abstract | We discuss the carrier injection mechanism from source/drain to a channel in the on/off-state of Schottky-barrier silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor by developing a refined extraction method for estimation of the Schottky-barrier height. This method is applied to validate the suggested mechanism by utilizing the dummy-gate in an underlap device with a thicker spacer and applying back-gate bias to SOI wafer. The results clearly show that the tunneled carriers from the drain side drive the off-state leakage current. In contrast with the conventional leakage path, the leakage current flows along the interfacial surface of the channel rather than a path underneath the channel. | - |
dc.description.sponsorship | the National Research Program for the 0.1-Terabit Nonvolatile Memory Development Initiative, sponsored by the Korean Ministry of Commerce, Industry and Energy World Class University WCU program Grant No. R31-20009 from KMEST, Republic of Korea | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Characterization of current injection mechanism in Schottky-barrier metal-oxide-semiconductor field-effect transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000269723200078 | - |
dc.identifier.scopusid | 2-s2.0-69549083065 | - |
dc.type.rims | ART | - |
dc.citation.volume | 95 | - |
dc.citation.issue | 8 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3204439 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Jang, Moon-Gyu | - |
dc.contributor.nonIdAuthor | Choi, Chel-Jong | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | charge injection | - |
dc.subject.keywordAuthor | leakage currents | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | Schottky gate field effect transistors | - |
dc.subject.keywordAuthor | silicon-on-insulator | - |
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