Photoluminescence due to the Hole Capturing of DX- Centers in $In_{0.32}Ga_{0.68}$P:(S, Se, Te)
- Issue Date
- 1997
- Language
- KOR
- Citation
Korean Conference on Semiconductors, pp.249 - 250
- Appears in Collection
- PH-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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