Photoluminescence due to the Hole Capturing of DX- Centers in $In_{0.32}Ga_{0.68}$P:(S, Se, Te)

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Issue Date
1997
Language
KOR
Citation

Korean Conference on Semiconductors, pp.249 - 250

URI
http://hdl.handle.net/10203/117205
Appears in Collection
PH-Conference Papers(학술회의논문)
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