DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Eujune | ko |
dc.contributor.author | Moon, Dong-Il | ko |
dc.contributor.author | Yang, Ji-Hwan | ko |
dc.contributor.author | Lim, KeongSu | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2009-10-08T04:55:03Z | - |
dc.date.available | 2009-10-08T04:55:03Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-05 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.30, no.5, pp.493 - 495 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/11714 | - |
dc.description.abstract | We report a new structure of high-responsivity photodetectors that utilizes the transparent and metallic zinc oxide (ZnO) gate in bulk silicon metal-oxide-semiconductor field-effect-transistor photodetectors. The device has a small optical window only in the channel region, and all other regions (depletion) are protected from external light. Whereas the amplification of photocurrent by external light was not significant at the floated or positively biased substrate, the photocurrent was enhanced at the grounded or negatively biased substrate due to the decrement of the recombination rate in the n-channel MOSFET. Responsivity was in excess of 1500 A/W under white-light illumination, which is higher than that of conventional photodetectors with the semi-transparent polycrystalline-silicon gate. | - |
dc.description.sponsorship | the National Research and Development Program (NRDP, 2005-01274) for the development of biomedical function monitoring biosensors, sponsored by the Korea Ministry of Education, Science and Technology (MEST) | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
dc.subject | PHOTOTRANSISTORS | - |
dc.subject | PHOTODIODE | - |
dc.subject | DEVICE | - |
dc.title | Transparent Zinc Oxide Gate Metal-Oxide-Semiconductor Field-Effect Transistor for High-Responsivity Photodetector | - |
dc.type | Article | - |
dc.identifier.wosid | 000265711700023 | - |
dc.identifier.scopusid | 2-s2.0-67349114534 | - |
dc.type.rims | ART | - |
dc.citation.volume | 30 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 493 | - |
dc.citation.endingpage | 495 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lim, KeongSu | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Yang, Ji-Hwan | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Field-effect phototransistor | - |
dc.subject.keywordAuthor | photodetector | - |
dc.subject.keywordAuthor | transparent gate | - |
dc.subject.keywordPlus | PHOTOTRANSISTORS | - |
dc.subject.keywordPlus | PHOTODIODE | - |
dc.subject.keywordPlus | DEVICE | - |
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