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Structure effects on resistive switching of Al/TiOx/Al devices for RRAM applications

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dc.contributor.authorYu, Lee-Eunko
dc.contributor.authorKim, Sunghoko
dc.contributor.authorRyu, Min-Kiko
dc.contributor.authorChoi, Sung-Yoolko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2009-10-08T02:55:14Z-
dc.date.available2009-10-08T02:55:14Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-04-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.29, no.4, pp.331 - 333-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/11709-
dc.description.abstractResistive switching characteristics are investigated for Al/TiOx/Al devices, particularly for the structural effects in crossbar and via-hole-type devices. The via-hole structure shows more reliable switching characteristics than the crossbar structure, owing to the elimination of possible edge effects. The asymmetric switching behavior is analyzed with top Al/TiOx and bottom Al/TiOx interfaces. A trap-controlled space-charge-limited-current model is proposed as a possible switching mechanism, and it is verified that switching mainly occurs on the top electrode/TiOx interface side.-
dc.description.sponsorshipThis work was supported in part by the Center for Nanoscale Mechatronics and Manufacturing, which is one of the 21st Century Frontier Research Programs supported by the Korean Ministry of Science and Technology, and in part by the Samsung Electronics Company, Ltd.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleStructure effects on resistive switching of Al/TiOx/Al devices for RRAM applications-
dc.typeArticle-
dc.identifier.wosid000254225800016-
dc.identifier.scopusid2-s2.0-41749085966-
dc.type.rimsART-
dc.citation.volume29-
dc.citation.issue4-
dc.citation.beginningpage331-
dc.citation.endingpage333-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2008.918253-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorYu, Lee-Eun-
dc.contributor.nonIdAuthorKim, Sungho-
dc.contributor.nonIdAuthorRyu, Min-Ki-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcrossbar structure-
dc.subject.keywordAuthorresistance random access memory (RRAM)-
dc.subject.keywordAuthorresistive switching-
dc.subject.keywordAuthorspace-charge-limited conduction-
dc.subject.keywordAuthorvia-hole structure-
dc.subject.keywordAuthormetal-insulator-metal (MIM)-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusINTERFACE-
dc.subject.keywordPlusMEMORY-
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