Effects of Film Thickness and Halide Ion Incorporation on the Dielectric Property of Passivating Ta2O5 Film
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Pyun, Su Il | - |
| dc.date.accessioned | 2013-03-15T06:38:40Z | - |
| dc.date.available | 2013-03-15T06:38:40Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995 | - |
| dc.identifier.citation | CIMTEC World Ceramics Cong., v., no., pp.517 - 526 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/117049 | - |
| dc.language | ENG | - |
| dc.title | Effects of Film Thickness and Halide Ion Incorporation on the Dielectric Property of Passivating Ta2O5 Film | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 517 | - |
| dc.citation.endingpage | 526 | - |
| dc.citation.publicationname | CIMTEC World Ceramics Cong. | - |
| dc.identifier.conferencecountry | Italy | - |
| dc.identifier.conferencecountry | Italy | - |
| dc.contributor.localauthor | Pyun, Su Il | - |
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