DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sung-Jin | - |
dc.contributor.author | Han, Jin-Woo | - |
dc.contributor.author | Kim, Sungho | - |
dc.contributor.author | Choi, Cheljong | - |
dc.contributor.author | Jang, Monngyu | - |
dc.contributor.author | Choi, Yang-Kyu | - |
dc.date.accessioned | 2009-10-08T02:16:00Z | - |
dc.date.available | 2009-10-08T02:16:00Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-09-24 | - |
dc.identifier.citation | Solid State Devices and Materials, v., no., pp.226 - 227 | - |
dc.identifier.uri | http://hdl.handle.net/10203/11702 | - |
dc.language | ENG | - |
dc.language.iso | en_US | en |
dc.title | Current Flow Mechanism in Schottky-Barrier MOSFETs and Application to the 1T-DRAM | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 226 | - |
dc.citation.endingpage | 227 | - |
dc.citation.publicationname | Solid State Devices and Materials | - |
dc.identifier.conferencecountry | Japan | - |
dc.identifier.conferencecountry | Japan | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Choi, Sung-Jin | - |
dc.contributor.nonIdAuthor | Han, Jin-Woo | - |
dc.contributor.nonIdAuthor | Kim, Sungho | - |
dc.contributor.nonIdAuthor | Choi, Cheljong | - |
dc.contributor.nonIdAuthor | Jang, Monngyu | - |
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