Current Flow Mechanism in Schottky-Barrier MOSFETs and Application to the 1T-DRAM

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dc.contributor.authorChoi, Sung-Jin-
dc.contributor.authorHan, Jin-Woo-
dc.contributor.authorKim, Sungho-
dc.contributor.authorChoi, Cheljong-
dc.contributor.authorJang, Monngyu-
dc.contributor.authorChoi, Yang-Kyu-
dc.date.accessioned2009-10-08T02:16:00Z-
dc.date.available2009-10-08T02:16:00Z-
dc.date.created2012-02-06-
dc.date.issued2008-09-24-
dc.identifier.citationSolid State Devices and Materials, v., no., pp.226 - 227-
dc.identifier.urihttp://hdl.handle.net/10203/11702-
dc.languageENG-
dc.language.isoen_USen
dc.titleCurrent Flow Mechanism in Schottky-Barrier MOSFETs and Application to the 1T-DRAM-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage226-
dc.citation.endingpage227-
dc.citation.publicationnameSolid State Devices and Materials-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorChoi, Sung-Jin-
dc.contributor.nonIdAuthorHan, Jin-Woo-
dc.contributor.nonIdAuthorKim, Sungho-
dc.contributor.nonIdAuthorChoi, Cheljong-
dc.contributor.nonIdAuthorJang, Monngyu-

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