InP-Based High Speed Digital Logic Gates Using an RTD/HBT Heterostructure

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dc.contributor.authorLin, C. H.-
dc.contributor.authorYang, Kyounghoon-
dc.contributor.authorGonzalez, A. F.-
dc.contributor.authorEast, J. R.-
dc.contributor.authorMazumder, P.-
dc.contributor.authorHaddad, G. I.-
dc.date.accessioned2007-08-30T06:35:03Z-
dc.date.available2007-08-30T06:35:03Z-
dc.date.created2012-02-06-
dc.date.issued1999-05-16-
dc.identifier.citationIEEE Int. Conf. on InP and Related Material, v., no., pp.419 - 422-
dc.identifier.urihttp://hdl.handle.net/10203/1169-
dc.description.sponsorshipthe U.S. Army Research Office under the URI programen
dc.languageENG-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titleInP-Based High Speed Digital Logic Gates Using an RTD/HBT Heterostructure-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage419-
dc.citation.endingpage422-
dc.citation.publicationnameIEEE Int. Conf. on InP and Related Material-
dc.identifier.conferencecountrySwitzerland-
dc.identifier.conferencecountrySwitzerland-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorLin, C. H.-
dc.contributor.nonIdAuthorGonzalez, A. F.-
dc.contributor.nonIdAuthorEast, J. R.-
dc.contributor.nonIdAuthorMazumder, P.-
dc.contributor.nonIdAuthorHaddad, G. I.-

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