Short Channel Effects in N- and P- Channel Polysilicon Thin Film Transistors with Very Thin ECR N2O Plasma Gate Dielectrics

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Issue Date
1997
Language
ENG
Citation

The International Conference on Solid State Devices and Materials, pp.372 - 373

URI
http://hdl.handle.net/10203/116908
Appears in Collection
RIMS Conference Papers
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