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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Performance of new self-aligned InP/InGaAs HBT's using crystallographically defined emitter contact technology

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dc.contributor.authorKim, M.ko
dc.contributor.authorKim, T.ko
dc.contributor.authorJeon, S.ko
dc.contributor.authorYoon, M.ko
dc.contributor.authorKwon, Young Seko
dc.contributor.authorYang, Kyounghoonko
dc.date.accessioned2007-08-30T06:33:43Z-
dc.date.available2007-08-30T06:33:43Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-05-14-
dc.identifier.citation2001 International Conference on Indium Phosphide and Related Materials, pp.220 - 223-
dc.identifier.urihttp://hdl.handle.net/10203/1168-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titlePerformance of new self-aligned InP/InGaAs HBT's using crystallographically defined emitter contact technology-
dc.typeConference-
dc.identifier.wosid000172226900057-
dc.identifier.scopusid2-s2.0-0034853531-
dc.type.rimsCONF-
dc.citation.beginningpage220-
dc.citation.endingpage223-
dc.citation.publicationname2001 International Conference on Indium Phosphide and Related Materials-
dc.identifier.conferencecountryJA-
dc.identifier.conferencelocationNara-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKwon, Young Se-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorKim, M.-
dc.contributor.nonIdAuthorKim, T.-
dc.contributor.nonIdAuthorJeon, S.-
dc.contributor.nonIdAuthorYoon, M.-
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