Effect of Post Hydrogen Treatment on the Boron Doped a-SiC:H Film Using Mercury-sensitized Photo-CVD Method and Its Application to Amorphous Silicon Solar Cells

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dc.contributor.authorLim, Koeng Su-
dc.contributor.authorJang, JH-
dc.date.accessioned2013-03-15T06:07:00Z-
dc.date.available2013-03-15T06:07:00Z-
dc.date.created2012-02-06-
dc.date.issued1997-
dc.identifier.citationISES 1997 Solar World Congress, v., no., pp.114 - 119-
dc.identifier.urihttp://hdl.handle.net/10203/116879-
dc.languageENG-
dc.titleEffect of Post Hydrogen Treatment on the Boron Doped a-SiC:H Film Using Mercury-sensitized Photo-CVD Method and Its Application to Amorphous Silicon Solar Cells-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage114-
dc.citation.endingpage119-
dc.citation.publicationnameISES 1997 Solar World Congress-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorLim, Koeng Su-
dc.contributor.nonIdAuthorJang, JH-
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EE-Conference Papers(학술회의논문)
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