Temperature dependent universal hole and electron mobility models for CMOS circuit simulation

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Issue Date
1995-11-06
Language
ENG
Citation

Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, pp.210 - 213

URI
http://hdl.handle.net/10203/116827
Appears in Collection
EE-Conference Papers(학술회의논문)
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