DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, HyoHoon | - |
dc.contributor.author | Yoo, BS | - |
dc.contributor.author | Lee, EH | - |
dc.contributor.author | Park, MS | - |
dc.contributor.author | Ahn, BT | - |
dc.date.accessioned | 2013-03-15T05:12:31Z | - |
dc.date.available | 2013-03-15T05:12:31Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995-08-21 | - |
dc.identifier.citation | International Conference on Solid State Devices and Material 1995s, v., no., pp.443 - 445 | - |
dc.identifier.uri | http://hdl.handle.net/10203/116600 | - |
dc.language | ENG | - |
dc.title | threshold current density InGaAs surface-emitting lasers buried by amorphous GaAs | - |
dc.title.alternative | threshold current density InGaAs surface-emitting lasers buried by amorphous GaAs | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 443 | - |
dc.citation.endingpage | 445 | - |
dc.citation.publicationname | International Conference on Solid State Devices and Material 1995s | - |
dc.identifier.conferencecountry | Japan | - |
dc.identifier.conferencecountry | Japan | - |
dc.contributor.localauthor | Park, HyoHoon | - |
dc.contributor.nonIdAuthor | Yoo, BS | - |
dc.contributor.nonIdAuthor | Lee, EH | - |
dc.contributor.nonIdAuthor | Park, MS | - |
dc.contributor.nonIdAuthor | Ahn, BT | - |
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