threshold current density InGaAs surface-emitting lasers buried by amorphous GaAsthreshold current density InGaAs surface-emitting lasers buried by amorphous GaAs

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dc.contributor.authorPark, HyoHoon-
dc.contributor.authorYoo, BS-
dc.contributor.authorLee, EH-
dc.contributor.authorPark, MS-
dc.contributor.authorAhn, BT-
dc.date.accessioned2013-03-15T05:12:31Z-
dc.date.available2013-03-15T05:12:31Z-
dc.date.created2012-02-06-
dc.date.issued1995-08-21-
dc.identifier.citationInternational Conference on Solid State Devices and Material 1995s, v., no., pp.443 - 445-
dc.identifier.urihttp://hdl.handle.net/10203/116600-
dc.languageENG-
dc.titlethreshold current density InGaAs surface-emitting lasers buried by amorphous GaAs-
dc.title.alternativethreshold current density InGaAs surface-emitting lasers buried by amorphous GaAs-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage443-
dc.citation.endingpage445-
dc.citation.publicationnameInternational Conference on Solid State Devices and Material 1995s-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorPark, HyoHoon-
dc.contributor.nonIdAuthorYoo, BS-
dc.contributor.nonIdAuthorLee, EH-
dc.contributor.nonIdAuthorPark, MS-
dc.contributor.nonIdAuthorAhn, BT-
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EE-Conference Papers(학술회의논문)
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