Selective Lateral Etching Method for Extrinsic Base-Collectro Capacitance Reduction of AlGaAs/GaAs Heterojunction Bipolar Transistor

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dc.contributor.authorLee, Hee Chul-
dc.contributor.authorKim, DH-
dc.date.accessioned2013-03-15T04:29:35Z-
dc.date.available2013-03-15T04:29:35Z-
dc.date.created2012-02-06-
dc.date.issued1996-03-01-
dc.identifier.citation8th Int. Symp. on the Physics of Semiconductors and Applications, v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/116377-
dc.languageENG-
dc.titleSelective Lateral Etching Method for Extrinsic Base-Collectro Capacitance Reduction of AlGaAs/GaAs Heterojunction Bipolar Transistor-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationname8th Int. Symp. on the Physics of Semiconductors and Applications-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorKim, DH-
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EE-Conference Papers(학술회의논문)
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