Heavily Si-doped GaAs

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dc.contributor.authorLee, Hee Chul-
dc.contributor.authorKim, Jae Eun-
dc.contributor.authorPark, Hae Yong-
dc.contributor.authorLee, NY-
dc.contributor.authorLee, C-
dc.contributor.authorKwak, DH-
dc.contributor.authorLim, H-
dc.date.accessioned2013-03-15T03:21:42Z-
dc.date.available2013-03-15T03:21:42Z-
dc.date.created2012-02-06-
dc.date.issued1995-
dc.identifier.citation제 2회 한국반도체 학술대회, v., no., pp.421 - 422-
dc.identifier.urihttp://hdl.handle.net/10203/116020-
dc.languageKOR-
dc.titleHeavily Si-doped GaAs-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage421-
dc.citation.endingpage422-
dc.citation.publicationname제 2회 한국반도체 학술대회-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.localauthorKim, Jae Eun-
dc.contributor.localauthorPark, Hae Yong-
dc.contributor.nonIdAuthorLee, NY-
dc.contributor.nonIdAuthorLee, C-
dc.contributor.nonIdAuthorKwak, DH-
dc.contributor.nonIdAuthorLim, H-
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EE-Conference Papers(학술회의논문)PH-Conference Papers(학술회의논문)PH-Conference Papers(학술회의논문)
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