Enhancement of the Steady State Minorty Carrier Life Time in HgCdTe Photodiode

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dc.contributor.authorLee, Hee Chul-
dc.contributor.authorJung, H-
dc.contributor.authorKim , CK-
dc.date.accessioned2013-03-15T03:03:06Z-
dc.date.available2013-03-15T03:03:06Z-
dc.date.created2012-02-06-
dc.date.issued1995-10-01-
dc.identifier.citationU.S Workshop on the Physics and Chemistry of HgCdTe and Other IR Materials, Baltimore, 1995, v., no., pp.115 - 117-
dc.identifier.urihttp://hdl.handle.net/10203/115920-
dc.languageENG-
dc.titleEnhancement of the Steady State Minorty Carrier Life Time in HgCdTe Photodiode-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage115-
dc.citation.endingpage117-
dc.citation.publicationnameU.S Workshop on the Physics and Chemistry of HgCdTe and Other IR Materials, Baltimore, 1995-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorJung, H-
dc.contributor.nonIdAuthorKim , CK-
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EE-Conference Papers(학술회의논문)
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