Low Threshold Current Density Surface-Emitting Lasers Buried by Amorphous GaAs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ahn, Byung Tae | - |
| dc.date.accessioned | 2013-03-15T02:44:52Z | - |
| dc.date.available | 2013-03-15T02:44:52Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995 | - |
| dc.identifier.citation | the 1995 International Conference on Solid State Devices and Materials (SSDM95), v., no., pp.443 - 445 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/115809 | - |
| dc.language | ENG | - |
| dc.title | Low Threshold Current Density Surface-Emitting Lasers Buried by Amorphous GaAs | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 443 | - |
| dc.citation.endingpage | 445 | - |
| dc.citation.publicationname | the 1995 International Conference on Solid State Devices and Materials (SSDM95) | - |
| dc.contributor.localauthor | Ahn, Byung Tae | - |
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