인듐 확산에 의해 제작된 HgCdTe 다이오드의 전기적 특성

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dc.contributor.author이희철-
dc.contributor.author박승만-
dc.contributor.author김재묵-
dc.contributor.author김충기-
dc.date.accessioned2013-03-15T02:36:07Z-
dc.date.available2013-03-15T02:36:07Z-
dc.date.created2012-02-06-
dc.date.issued1995-
dc.identifier.citation제 6회 HgCdTe 반도체 Conference, v., no., pp.49 - 56-
dc.identifier.urihttp://hdl.handle.net/10203/115777-
dc.languageKOR-
dc.title인듐 확산에 의해 제작된 HgCdTe 다이오드의 전기적 특성-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage49-
dc.citation.endingpage56-
dc.citation.publicationname제 6회 HgCdTe 반도체 Conference-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor이희철-
dc.contributor.localauthor김충기-
dc.contributor.nonIdAuthor박승만-
dc.contributor.nonIdAuthor김재묵-
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EE-Conference Papers(학술회의논문)
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